| 摘要 |
PROBLEM TO BE SOLVED: To provide a phase-change memory cell, having means for thermal insulation of resistive elements of memory cells and for dissipation of heat in between the memory cells, to prevent thermal crosstalks and improve the data retention characteristics at high temperatures. SOLUTION: The phase-change memory cell array 600 has a substrate 302, transistors 108, element-isolation gates 406, a metal plate for ground 602, a capping layer 410, spacers 408, phase-change elements 106, phase-change element contacts 304 each being provided with an electrode, bit line contacts 306, electrodes 416, bit lines 112, and dielectric materials 412 and 414. The electrodes 416 electrically couple the phase-change elements 106 to the metal plate for ground 602. The spacers 408 thermally insulate the phase-change elements 106. The bit lines 112 form a heat dissipating means for dissipating the heat that conducts via the spacers 408 from the phase-change elements 106. COPYRIGHT: (C)2007,JPO&INPIT
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