SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide an FET capable of satisfying both high breakdown voltage and low on-resistance. SOLUTION: The FET is configured so that a part of a first hetero-semiconductor region 4 having a bandgap different from that of a substrate region 1 is formed on a second hetero-semiconductor region 3 so as to contact a drain region 2 formed on the substrate region 1, and so that the thickness of a channel of the first hetero-semiconductor region 4 contacting a gate electrode 6 via at least a gate insulating film 5 is formed to be thinner than the sum of the thickness of the second hetero-semiconductor region 3 on a portion where the second hetero-semiconductor region 3 and the first hetero-semiconductor region 4 are laminated, and the thickness of the first hetero-semiconductor region 4. COPYRIGHT: (C)2007,JPO&INPIT