| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin-film transistor having less variation in performance and low cost, and to provide the thin-film transistor. SOLUTION: The method of manufacturing the thin-film transistor includes a step of forming a gate electrode on a substrate; step of forming a gate insulating film on the gate electrode; a step of applying a semiconductor material on the gate insulating layer to form a semiconductor layer; a step of forming a repulsive layer having a repulsive force against an electrode material on the surface where the semiconductor material is applied; a step of emitting a light from a surface where the gate electrode of the substrate is not formed, and removing a semiconductor layer and the repulsive layer on a portion other than a portion shielded from a light by the gate electrode, using sublimation; and a step of dropping a fluid electrode material on the repulsive layer remaining on the substrate to form each of a source electrode, and a drain electrode by separating the fluid electrode material on the repulsive layer. COPYRIGHT: (C)2007,JPO&INPIT
|
