发明名称 DEHYDRATING METHOD AND DEHYDRATING APPARATUS, SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a dehydrating apparatus capable of positively dehydrating a low dielectric constant interlayer insulating film without imposing damages on each portion of a substrate such as the low dielectric constant interlayer insulating film. SOLUTION: The dehydrating apparatus 100 is provided with a chamber 1 capable of accommodating a wafer W having the low dielectric constant interlayer insulating film, and a dehydrating agent supplying mechanism 2 for supplying a dehydrating agent having hygroscopicity larger than that of the low dielectric constant interlayer insulating film to the inside of the chamber 1. In the apparatus 100, the wafer W is accommodated in the chamber 1, the dehydrating agent is supplied into the chamber 1 using the dehydrating agent supply mechanism 2, and the low dielectric constant interlayer insulating film is dehydrated in the chamber 1 by the dehydrating agent. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007324293(A) 申请公布日期 2007.12.13
申请号 JP20060151465 申请日期 2006.05.31
申请人 TOKYO ELECTRON LTD 发明人 MIYOSHI SHUSUKE
分类号 H01L21/316;H01L21/768;H01L23/522 主分类号 H01L21/316
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