| 摘要 |
PROBLEM TO BE SOLVED: To provide a bending magnet capable of controlling an orbit state in Y direction of ion beams without bending a beam line and while suppressing a focusing action of an undesirable X direction, and an ion implantation device equipped therewith. SOLUTION: The bending magnet 10 includes a first magnet electrode pair 20 and a second magnet electrode pair 30 which are mutually opposed in X direction by pinching a beam path of the ion beam 2 of a long ribbon state in the Y direction, and which cover respectively half or more of the Y direction of the ion beam 2, and coils 44 to 47 in which mutually reversed magnetic fields B1, B2 are made to be generated in a gap of the both magnetic electrode pairs 20, 30. Then, lengths L1, L2 in the ion beam advancing direction Z of the respective magnetic electrodes 22, 32 constituting the both magnetic electrode pairs 20, 30 are made to be larger as they go away outside from the center of the beam path in the Y direction. COPYRIGHT: (C)2008,JPO&INPIT
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