| 发明名称 |
GaN BASE LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREFOR USING MECHANICAL POST-PROCESSING |
| 摘要 |
Disclosed are GaN based light emitting devices and methods of manufacturing the same using post-mechanical treatment. The GaN based light emitting device includes first and second electrodes, and a flexible substrate which are sequentially stacked, an n-type GaN layer, an activation layer, and a p-type GaN layer interposed between the first and second electrodes and forming a core-shell structure, and a buried layer interposed between the flexible substrate and the first electrode, wherein the first electrode and the core-shell structure are buried in the buried layer. |
| 申请公布号 |
US2016172535(A1) |
申请公布日期 |
2016.06.16 |
| 申请号 |
US201414909297 |
申请日期 |
2014.07.30 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI Junhee;KIM Sangwon;AHN Hoyoung;LEE Eunhong |
| 分类号 |
H01L33/06;H01L33/00;H01L33/38;H01L33/32 |
主分类号 |
H01L33/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A GaN based light emitting device comprising:
first and second electrodes, and a flexible substrate which are sequentially stacked; an n-type GaN layer, an activation layer, and a p-type GaN layer interposed between the first and second electrodes and forming a core-shell structure; and a buried layer interposed between the flexible substrate and the first electrode, wherein the first electrode and the core-shell structure are buried in the buried layer. |
| 地址 |
Suwon-si KR |
