| 发明名称 |
THIN FILM TRANSISTOR WITH IMPROVED ELECTRICAL CHARACTERISTICS |
| 摘要 |
A thin film transistor having uniform electrical characteristics and reduced power consumption is presented. The thin film transistor includes a semiconductor layer, a first metal oxide layer coming in contact with the semiconductor layer and having thermal conductivity that is lower than the thermal conductivity of the semiconductor layer and a second metal oxide layer coming in contact with the first metal oxide layer and having thermal conductivity that is higher than the thermal conductivity of the first metal oxide layer. |
| 申请公布号 |
US2016172508(A1) |
申请公布日期 |
2016.06.16 |
| 申请号 |
US201514701325 |
申请日期 |
2015.04.30 |
| 申请人 |
Samsung Display Co. Ltd. |
发明人 |
LEE Je Hun;CHU Byung Hwan |
| 分类号 |
H01L29/786;H01L27/12 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor comprising:
a semiconductor layer; a first metal oxide layer in contact with the semiconductor layer and having thermal conductivity that is lower than the thermal conductivity of the semiconductor layer; and a second metal oxide layer in contact with the first metal oxide layer and having thermal conductivity that is higher than the thermal conductivity of the first metal oxide layer. |
| 地址 |
Yongin-City KR |
