SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a semiconductor substrate having a first conductivity type, an epitaxial layer having a second conductivity type, an isolation area in the epitaxial layer to define an active area of the semiconductor substrate, a body area having a first conductivity type and a drift area having a second conductivity type adjacent to each other in the epitaxial layer, a LOCOS insulating layer in the drift area and surrounded by the drift area, a drain area adjacent to a side part of the LOCOS insulating layer and surrounded by the drift area, a body contact area and a source area in the body area and surrounded by the body area, and a gate area overlapping the drift area and a part of the LOCOS insulating layer from a direction of the body area.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate having a first conductivity type; an epitaxial layer having a second conductivity type on the semiconductor substrate; an isolation area in the epitaxial layer to define an active area of the semiconductor substrate; a body area having a first conductivity type and a drift area having a second conductivity type, the body area and the drift area being adjacent to each other in the epitaxial layer; a local oxidation of silicon (LOCOS) insulating layer in the drift area, side and lower surfaces of the LOCOS insulating layer being surrounded by the drift area; a drain area adjacent to a side part of the LOCOS insulating layer, side and lower surfaces of the drain area being surrounded by the drift area; a body contact area and a source area in the body area, side and lower surfaces of the body contact area and the source area being surrounded by the body area; and a gate area overlapping the drift area and a part of the LOCOS insulating layer from a direction of the body area.