| 发明名称 |
CHEMICAL MECHANICAL PLANARIZATION TOPOGRAPHY CONTROL VIA IMPLANT |
| 摘要 |
Systems and methods for chemical mechanical planarization topography control via implants are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes increasing the content of at least one of silicon or germanium in at least select regions of a dielectric material thereby reducing the material removal rate for a chemical mechanical polishing (CMP) process at the select regions, and removing material from the dielectric material using the CMP process. In another embodiment, a method of manufacturing a semiconductor device includes increasing content of at least one of boron, phosphorus, or hydrogen in at least select regions of a dielectric material thereby increasing the material removal rate of a CMP process at the select regions, and removing material from the dielectric material using the CMP process. |
| 申请公布号 |
US2016172208(A1) |
申请公布日期 |
2016.06.16 |
| 申请号 |
US201414571946 |
申请日期 |
2014.12.16 |
| 申请人 |
Micron Technology, Inc. |
发明人 |
Carswell Andrew;Lindenberg Tony M.;Morley Mark;Ritter Kyle;Liu Lequn |
| 分类号 |
H01L21/306;H01L23/528;H01L29/16;H01L29/36;H01L21/02;H01L21/308 |
主分类号 |
H01L21/306 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
increasing the content of at least one of silicon or germanium in at least select regions of a dielectric material and thereby reducing a material removal rate of a chemical mechanical planarization (CMP) process at the select regions; removing material from the dielectric material using the CMP process, wherein increasing content of at least one of silicon or germanium comprises:
masking non-select regions of the dielectric material; andimplanting silicon or germanium in the select regions. |
| 地址 |
Boise ID US |
