| 摘要 |
[Problem] The present invention addresses the problem of providing a method for producing a ferroelectric film from a lead-free material, said ferroelectric film having a perovskite structure that ferroelectric films produced by conventional methods have not been able to have. [Solution] One embodiment of the present invention is a ferroelectric film that is an ABO3 film having a perovskite structure, wherein A represents at least one element selected from the group consisting of alkali metals, alkaline earth metals, Ag, Bi and group 3 elements excluding Sc, and B represents at least one element selected from the group consisting of Mg, Sc, group 4-6 elements, Mn, Fe, Co, Ni, Cu, Zn, B, Al, Ga, Si, Ge, Sn, P, As, Sb and S. This ferroelectric film is formed by a sol-gel method and is crystallized by means of firing at a pressure of from 1 MPa to 20 MPa (inclusive). |
