发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device that has a base substrate with a high heat radiation property for heat quantity generated from a semiconductor element and with rigidity.SOLUTION: A semiconductor device according to an embodiment comprises a base substrate, and a semiconductor element arranged on the base substrate. On the base substrate, at least in a region where the semiconductor element is arranged, a hole part is formed so that an area of an opening increases as it goes from a side where the semiconductor element is arranged toward an opposite side direction. The base substrate includes a material having a higher thermal conductivity than the circumference, in the hole part.SELECTED DRAWING: Figure 2
申请公布号 JP2016178194(A) 申请公布日期 2016.10.06
申请号 JP20150056978 申请日期 2015.03.19
申请人 TOSHIBA CORP 发明人 KURODA KENTA
分类号 H01L23/36;H01L23/06;H01L23/12;H01L23/373 主分类号 H01L23/36
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