| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light emitting element wherein a damage which an active layer receives is reduced and further an Al contained in the active layer is prevented from oxidizing, and to provide the semiconductor light emitting element wherein the Al contained in the active layer is prevented from oxidizing. SOLUTION: First, a group III-V compound semiconductor layer 16a is formed on a group III-V compound semiconductor substrate 12. Then an etching mask M is formed on the group III-V compound semiconductor layer 16a. Then, by dry-etching the group III-V compound semiconductor layer 16a by using the etching mask M, a first diffraction grating region G1 is formed having a plurality of periodical recesses 44. Then, by using the etching mask M, the active layer 18 containing AlGaInAs is buried in the recess 44. Then an anti-oxidation layer 23 comprising a group III-V compound semiconductor is formed on the active layer 18. Consequently, a distributed feedback semiconductor light emitting element 10 is manufactured. COPYRIGHT: (C)2008,JPO&INPIT
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