| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus that prevents particles from being generated, by a Faraday shield. SOLUTION: A first electrode 107, a second electrode 108, and a third electrode 106 are provided in a vacuum treatment chamber; a semiconductor wafer W is subjected to desired etching treatment; then a switch 116 connected to the second electrode 108 is turned off; prescribed high-frequency power is applied to the first electrode 107; and plasma is generated in a vacuum vessel 101. As a result, since the high-frequency power applied to the first electrode 107 is not distributed to the third electrode, ions in plasma are prevented from being pulled into a dielectric 104, preventing the dielectric from being etched. Hence, generation of particles are prevented. COPYRIGHT: (C)2008,JPO&INPIT
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