| 摘要 |
FIELD: medicine.SUBSTANCE: invention can be used in medicine, crystallography, nuclear physics, etc. Hybrid pixel photodetector according to invention comprises first-silicon substrate, on upper (lower) surface of which integrated VLSI-microchip is placed, including array of pixels with CMOS electronic circuits for reading and processing of electrical signals, wherein on surface of pixels contact electrodes are placed and it contains second semiconductor substrate of n(p) type of conductivity, containing on its upper (lower) surface heavily doped n(p) layer with metal common cathode (anode) electrode on it, and on its lower (upper) surface array of p-i-n-diodes pixel is placed, which are connected via contact electrodes to corresponding pixels of matrix of first silicon substrate, located on lower (upper) surface of second substrate, wherein second substrate of one n(p) type of conductivity is common anode (cathode) area and it forms with semiconductor contact electrodes of p(n) type of conductivity, being simultaneously cathode (anode) electrodes, array of p-i-n-diodes.EFFECT: invention provides increased coordinate resolution.5 cl, 1 tbl, 7 dwg |
