MAGNETIC MEMORY CELLS, SEMICONDUCTOR DEVICES, AND METHODS OF FORMATION

摘要

A magnetic cell includes magnetic, secondary oxide, and getter seed regions. During formation, a diffusive species is transferred from a precursor magnetic material to the getter seed region, due to a chemical affinity elicited by a getter species. The depletion of the magnetic material enables crystallization of the depleted magnetic material through crystal structure propagation from a neighboring crystalline material, without interference from the now-enriched getter seed region. This promotes high tunnel magnetoresistance and high magnetic anisotropy strength. Also during formation, another diffusive species is transferred from a precursor oxide material to the getter seed region, due to a chemical affinity elicited by another getter species. The depletion of the oxide material enables lower electrical resistance and low damping in the cell structure. Methods of fabrication and semiconductor devices are also disclosed.

主权项

1. A magnetic memory cell, comprising:
a magnetic tunnel junction sub-structure comprising a nonmagnetic intermediate region between at least two magnetic regions; an oxide region proximate to the magnetic tunnel junction sub-structure and thinner than the nonmagnetic intermediate region of the magnetic tunnel junction sub-structure; and a getter region proximate to the oxide region and comprising boron and oxygen.