| 摘要 |
A method for manufacturing a solid-state image sensor, the method comprising preparing a substrate including a photoelectric conversion portion, forming, on the substrate, a structure which includes a first member made of a material containing silicon oxide and a second member arranged on the first member and made of a material containing silicon carbide, forming an opening in a position above the photoelectric conversion portion in the structure by removing a part of the first and the second members, and forming a transparent member in the opening, wherein the second member is formed at a first temperature and the transparent member is formed at a second temperature lower than the first temperature. |
| 主权项 |
1. A method for manufacturing a solid-state image sensor, the method comprising:
preparing a semiconductor substrate including a photoelectric conversion portion; forming, on the semiconductor substrate, a structure which includes a first member, which has insulating property, made of a material containing silicon oxide, and a second member, which has insulating property, arranged on the first member and made of a material containing silicon carbide; forming an opening in a position above the photoelectric conversion portion in the structure by removing a part of the first member and a part of the second member; and forming a third member, which has transparent property, in the opening, wherein the second member is formed at a first temperature in the forming the structure and the third member is formed at a second temperature lower than the first temperature in the forming the third member. |
