发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING PATTERN IN CONDUCTIVE LAYER
摘要 A method for forming a pattern in a conductive layer includes forming the conductive layer on an insulating layer, forming an etching mask on the conductive layer, and selectively etching the conductive layer to reach the insulating layer by using the etching mask. The etching mask includes a first portion masking a first area of the conductive layer, a second portion masking a second area that surrounds the first area via at least one opening that defines a boundary between the first portion and the second portion. The etching mask also includes a first communication portion connecting the first portion and the second portion. The at least one opening includes overlapping portions, and the first communication portion is provided between the overlapping portions.
申请公布号 US2016268294(A1) 申请公布日期 2016.09.15
申请号 US201514827507 申请日期 2015.08.17
申请人 Kabushiki Kaisha Toshiba 发明人 HASHIMOTO Junichi;MATSUDA Toru;ISHIDA Katsuhiro;NAMBU Hidetaka
分类号 H01L27/115;H01L21/3213;H01L21/768 主分类号 H01L27/115
代理机构 代理人
主权项 1. A method for forming a pattern in a conductive layer, the method comprising: forming the conductive layer on an insulating layer; forming an etching mask on the conductive layer, the etching mask including: a first portion masking a first area of the conductive layer,a second portion masking a second area that surrounds the first area via at least one opening that defines a boundary between the first portion and the second portion, the at least one opening includes overlapping portions, anda first communication portion connecting the first portion and the second portion, the first communication portion being provided between the overlapping portions; and selectively etching the conductive layer to reach the insulating layer by using the etching mask.
地址 Minato-ku JP