METHOD AND APPARATUS FOR PROTECTING METAL INTERCONNECT FROM HALOGEN BASED PRECURSORS

摘要

A method and apparatus for forming an interconnect on a substrate is provided. A protective layer is formed on the substrate and in a via formed on the substrate wherein the protective layer is resistant to a halogen containing material. A barrier layer is formed on top of the protective layer. The barrier layer comprises a halogen containing material. A metal layer is deposited over the barrier layer. In another embodiment, the protective layer is selectively deposited in the via.

主权项

1. A method of forming an interconnect on a substrate comprising:
forming a protective layer on a first metal layer exposed through a dielectric material, the protective layer formed on the dielectric material, wherein the protective layer is resistant to a halogen based precursor; forming a barrier layer on the protective layer; and depositing a second metal layer over the barrier layer.