发明名称 |
Methods for Probing Semiconductor Fins and Determining Carrier Concentrations |
摘要 |
A method includes probing at least one semiconductor fin using a four-point probe head, with four probe pins of the four-point probe head contacting the at least one semiconductor fin. A resistance of the at least one semiconductor fin is calculated. A carrier concentration of the semiconductor fin is calculated from the resistance. |
申请公布号 |
US2016268174(A1) |
申请公布日期 |
2016.09.15 |
申请号 |
US201615162320 |
申请日期 |
2016.05.23 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Wann Clement Hsingjen;Okuno Yasutoshi;Yeh Ling-Yen;Shih Chi-Yuan;Shao Yuan-Fu;Tsai Wei-Chun |
分类号 |
H01L21/66;H01L29/06;H01L29/66;H01L21/306 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
1. A method comprising:
forming a semiconductor region between two opposite portions of an isolation region; performing a planarization to level a top surface of the semiconductor region with top surfaces of the opposite portions of the isolation region; recessing top surfaces of the isolation region, wherein a top portion of the semiconductor region protrudes higher than a top surface of a remaining portion of the isolation region to form a semiconductor fin; probing the semiconductor region using a four-point probe head, wherein four pins of the four-point probe head are in contact with different portions of a top surface of the semiconductor fin; and determining a carrier concentration of the semiconductor region based on results of the probing. |
地址 |
Hsin-Chu TW |