发明名称 |
METHODS AND SYSTEMS FOR DOPANT ACTIVATION USING MICROWAVE RADIATION |
摘要 |
A semiconductor structure includes a substrate, a source/drain (S/D) junction, and an S/D contact. The S/D junction is associated with the substrate and includes a trench-defining wall, a semiconductor layer, and a semiconductor material. The trench-defining wall defines a trench. The semiconductor layer is formed over the trench-defining wall, partially fills the trench, substantially covers the trench-defining wall, and includes germanium. The semiconductor material is formed over the semiconductor layer and includes germanium, a percentage composition of which is greater than a percentage composition of the germanium of the semiconductor layer. The S/D contact is formed over the S/D junction. |
申请公布号 |
US2016329212(A1) |
申请公布日期 |
2016.11.10 |
申请号 |
US201615217024 |
申请日期 |
2016.07.22 |
申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
TSAI CHUN-HSIUNG;YANG HUAI-TEI;YU KUO-FENG;CHEN KEI-WEI |
分类号 |
H01L21/268;H01L29/08;H01L21/225;H01L29/32;H01L29/66;H01L21/02;H01L29/78;H01L29/167 |
主分类号 |
H01L21/268 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor structure comprising:
a substrate; a source/drain (S/D) junction associated with the substrate and including
a trench-defining wall that defines a trench,a semiconductor layer that is formed over the trench-defining wall, that partially fills the trench, that substantially covers the trench-defining wall, and that includes germanium, anda semiconductor material that is formed over the semiconductor layer and that includes germanium, a percentage composition of which is greater than a percentage composition of the germanium of the semiconductor layer; and an S/D contact formed over the S/D junction. |
地址 |
Hsinchu TW |