发明名称 |
SELECTIVE DOPANT JUNCTION FOR A GROUP III-V SEMICONDUCTOR DEVICE |
摘要 |
An approach to providing a method of forming a dopant junction in a semiconductor device. The approach includes performing a surface modification treatment on an exposed surface of a semiconductor layer and depositing a dopant material on the exposed surface of the semiconductor layer. Furthermore, the approach includes alloying a metal layer with a dopant layer to form a semiconductor device junction where the semiconductor layer is composed of a Group III-V semiconductor material, the surface modification treatment occurs in a vacuum chamber to remove surface oxides from the exposed surface of the semiconductor layer, and each of the above processes occur at a low temperature. |
申请公布号 |
US2016329211(A1) |
申请公布日期 |
2016.11.10 |
申请号 |
US201615211010 |
申请日期 |
2016.07.15 |
申请人 |
International Business Machines Corporation |
发明人 |
Chan Kevin K.;Hopstaken Marinus J.P.;Kim Young-Hee;Kobayashi Masaharu;Leobandung Effendi;Neumayer Deborah A.;Park Dae-Gyu;Rana Uzma;Tai Tsong-Lin |
分类号 |
H01L21/24;H01L29/66;H01L21/225;H01L29/267;H01L21/322;H01L21/324 |
主分类号 |
H01L21/24 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a dopant junction in a semiconductor device, the method comprising:
performing a surface modification treatment on an exposed surface of a semiconductor layer; alloying a metal layer with a dopant material to form a semiconductor device junction;wherein:
the semiconductor layer is composed of a Group III-V semiconductor material; the surface modification treatment occurs in a low pressure vacuum chamber and wherein the surface modification treatment includes applying a low velocity stream of gaseous hydrogen to the exposed surface of the semiconductor layer in order for oxygen desorption to occur to form a water vapor, which thereby removes a plurality of surface oxides from the exposed surface of the semiconductor layer in order to provide an oxide-free surface for material adhesion, and wherein after the surface modification treatment, the semiconductor device remains in an oxygen free environment; and each of the above processes occur at a low temperature. |
地址 |
Armonk NY US |