| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a device containing silicon germanium in which stress is reduced.SOLUTION: A manufacturing method includes a step of forming an amorphous metal layer 2 on an amorphous layer 1, a step of forming a metal layer 2, containing a metal and having a crystal plane oriented to a predetermined plane, on the amorphous metal layer 2, and a step of forming a first layer, containing a semiconductor containing silicon and the same metal as that contained in the metal layer, on the metal layer 2. The manufacturing method further includes a step of changing the first layer into a second layer 4a containing a compound of the metal and the semiconductor having a crystal plane oriented to the predetermined plane, and a step of forming a third layer 5, containing polycrystal silicon germanium having a crystal plane oriented to the predetermined plane, on the second layer 4a.SELECTED DRAWING: Figure 5 |
