| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element and a method of manufacturing the same capable of reducing a parasitic capacitance.SOLUTION: A semiconductor element 1 comprises: a support substrate 2; and a semiconductor laminate 4 provided on a principal surface 2a of the support substrate 2, and that has a collector layer 21, a base layer 22, and an emitter layer 23 sequentially laminated from the support substrate 2 side. The collector layer 21 has: a first surface 42 formed inside its lateral face 21a, and that extends in a direction crossing the principal surface 2a of the support substrate 2; and a second surface 43 that extends from an end 42a at the base layer 22 side, of the first surface 42 toward the lateral face 21a of the collector layer 21. The semiconductor element 1 has a region 12 contacted with the first surface 42 and the second surface 43 and that has a relative dielectric constant smaller than that of the collector layer 21.SELECTED DRAWING: Figure 2 |
