| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor having a microstructure with a high yield, and to provide a semiconductor device that enables high-speed response and high-speed drive by improving ON characteristics of the transistor.SOLUTION: An oxide semiconductor layer, a gate insulating layer, a gate electrode layer, an insulating layer, a conductive film, and an interlayer insulating layer are sequentially laminated. By cutting the conductive film, the conductive film on the gate electrode layer and the insulating layer is removed to form a source electrode layer and a drain electrode layer with self-alignment. Electrode layers are provided so as to be overlapped with regions contacted with the source and drain electrode layers and to be contacted with the oxide semiconductor layer.SELECTED DRAWING: Figure 1 |
