发明名称 GATE DRIVE CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a gate drive circuit capable of performing a stable and high speed operation by optimizing startup operation and terminating operation of a semiconductor driven element, separately from each other, by reducing the number of components and a mounting area to thereby prevent parasitic vibrations.SOLUTION: The drive circuit includes: a resistance value frequency-dependent element (13a) which is serially connected to a path from a source output terminal (12a) of a drive circuit (12) to a gate of an FET (14); and a resistance value frequency-dependent element (13b) which is serially connected to a path from a sink output terminal (12b) of a drive circuit (12) to the gate of an FET (14).SELECTED DRAWING: Figure 1
申请公布号 JP2016197821(A) 申请公布日期 2016.11.24
申请号 JP20150077234 申请日期 2015.04.03
申请人 SHARP CORP 发明人 NAKAHIRA TSUYOSHI;TANAKA KENICHI;SATO HIROYA;SATO TOMOTOSHI
分类号 H03K17/04;H02M1/08;H03K17/687 主分类号 H03K17/04
代理机构 代理人
主权项
地址