| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for an integrated circuit forming contacts connecting an upper layer and a lower layer at pitches among centers, smaller than the resolution limit of a lithography. <P>SOLUTION: The structures 11 of upper layers 1 and the structures 25 of lower layers 2 manufactured at a standard resolution are connected by the two contacts 31 and 32 mutually separated at intervals shorter than the resolution limit (a sub-lithographic) of the lithography. First masks 6 having lattice type regular patterns in first opening sections (holes) 61 are manufactured by using a double patterning technique for forming the contacts 3 for the sub-lithographic. The contacts containing the contacts 31 and 32 are manufactured by selecting any number of the first opening sections 61 in second masks (not shown) having the standard resolution are manufactured in addition to the first masks. <P>COPYRIGHT: (C)2009,JPO&INPIT |
