SEMICONDUCTOR NONVOLATILE MEMORY CELL AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR NONVOLATILE MEMORY HAVING THE SEMICONDUCTOR NONVOLATILE MEMORY CELL AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor nonvolatile memory cell which includes a charge storage layer and has high current efficiency, and to provide a semiconductor nonvolatile memory which facilitates integration of the semiconductor nonvolatile memory cell and a peripheral element and has high yield and reliability.

SOLUTION: The semiconductor nonvolatile memory cell comprises: an Si or SOI substrate 10 having a ridge-shaped activation region 12 provided in a stripe shape; element isolation regions 14 provided by burying both sides of the activation region and projecting an upper-end side of the activation region as a ridge portion 12a; a gate electrode 18 formed via a gate insulating film 16 which is orthogonal to the length direction of the ridge portion and straddles a top surface 12aa thereof and covering both side surfaces 12ab thereof and at least part of a top surface 14a of the element isolation region; a channel formation region which is formed in a position of a surface layer region of the ridge portion and opposite to the gate electrode; extension regions formed on both lengthwise side of the ridge portion in the channel formation region; and the charge storage layer 26 and a side wall 28 formed in order on the extension region and side surfaces of the gate electrode which are opposed to each other in the length direction of the ridge portion.

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