发明名称 |
RESONATOR MANUFACTURING METHOD |
摘要 |
Provided is a resonator manufacturing method whereby it is possible to effectively address resistivity variations in individual wafers. The resonator manufacturing method includes a step of forming a silicon oxide film on the surface of a silicon wafer in a degenerated state, with the thickness of the silicon oxide film being set in accordance with the doping amount of impurities in the silicon wafer. |
申请公布号 |
WO2016104004(A1) |
申请公布日期 |
2016.06.30 |
申请号 |
WO2015JP82672 |
申请日期 |
2015.11.20 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
UMEDA, KEIICHI;YAMADA, HIROSHI;AIDA, YASUHIRO |
分类号 |
H03H3/007;B81B3/00;B81C1/00;H03H9/24 |
主分类号 |
H03H3/007 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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