发明名称 RESONATOR MANUFACTURING METHOD
摘要 Provided is a resonator manufacturing method whereby it is possible to effectively address resistivity variations in individual wafers. The resonator manufacturing method includes a step of forming a silicon oxide film on the surface of a silicon wafer in a degenerated state, with the thickness of the silicon oxide film being set in accordance with the doping amount of impurities in the silicon wafer.
申请公布号 WO2016104004(A1) 申请公布日期 2016.06.30
申请号 WO2015JP82672 申请日期 2015.11.20
申请人 MURATA MANUFACTURING CO., LTD. 发明人 UMEDA, KEIICHI;YAMADA, HIROSHI;AIDA, YASUHIRO
分类号 H03H3/007;B81B3/00;B81C1/00;H03H9/24 主分类号 H03H3/007
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