发明名称 |
Mask blank and mask |
摘要 |
A mask blank is equipped with a thin film that forms a mask pattern formed on a substrate and a chemically amplified type resist film that is formed above the thin film. In the mask blank, a protective film that prevents movement of a substance that inhibits a chemical amplification function of the resist film from a bottom portion of the resist film to inside the resist film is provided between the thin film and the resist film. The mask blank suppresses the error of the line width dimension of the transfer pattern formed on the substrate to the design dimension of the transfer pattern line width of the transfer mask (actual dimension error) and also suppress linearity up to 10 nm.
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申请公布号 |
US2008070132(A1) |
申请公布日期 |
2008.03.20 |
申请号 |
US20070898587 |
申请日期 |
2007.09.13 |
申请人 |
HOYA CORPORATION;NISSAN CHEMICAL INDUSTRIES, LTD. |
发明人 |
HASHIMOTO MASAHIRO;ENOMOTO TOMOYUKI;SAKAGUCHI TAKAHIRO;SAKAMOTO RIKIMARU;NAGAI MASAKI |
分类号 |
G03F1/32;G03F1/36;G03F1/54;G03F1/56;H01L21/027 |
主分类号 |
G03F1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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