发明名称 ZINC OXIDE SEMICONDUCTOR ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a ZnO semiconductor element which uses a ZnO semiconductor and an organic material for active functions and has a completely novel function different from conventional functions for solving problems. <P>SOLUTION: An organic electrode 2 is formed on a ZnO semiconductor 1, and an Au film 3 is formed on the organic electrode 2. On the rear surface of the ZnO semiconductor 1, an electrode that is composed of a multilayer metal film composed of a Ti film 4 and an Au film 5 is formed so as to face the organic electrode 2. A bonding interface between the organic electrode 2 and the ZnO semiconductor 1 is in a pn-junction-like state, and rectification is generated between the organic electrode 2 and the ZnO semiconductor 1. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008211203(A) 申请公布日期 2008.09.11
申请号 JP20080021953 申请日期 2008.01.31
申请人 ROHM CO LTD;TOHOKU UNIV 发明人 NAKAHARA TAKESHI;YUJI HIROYUKI;KAWASAKI MASASHI;OTOMO AKIRA;TSUKASAKI ATSUSHI;FUKUMURA TOMOAKI;NAKANO MASANORI
分类号 H01L31/10;H01L21/28;H01L21/338;H01L29/423;H01L29/47;H01L29/778;H01L29/812;H01L29/872 主分类号 H01L31/10
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