PLASMA DOPED SEMICONDUCTOR DEVICES HAVING A DOPANT LOSS PREVENTIVE LAYER AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A plasma doped semiconductor devices having a dopant loss preventive layer and a method for manufacturing the same are provided to improve electrical properties by forming a gate electrode with a impurity loss prevention film after doping a source gas including a silicon component. CONSTITUTION: A gate dielectric layer(110) is formed on a semiconductor substrate(100). An N type gate electrode wiring(135) is formed on the gate dielectric layer. An NMOS area is covered by a photoresist solution mask and PMOS area is opened. The p type impurity is doped on the PMOS area through a plasma doping process. P type impurity plasma doping and plasma doping through a silicon source gas are performed at the same time and P-type impurity loss prevention film(140) is formed. Mask is eliminated and the gate electrode(115) is formed after cleaning.