发明名称 SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 A semiconductor manufacturing apparatus according to an embodiment includes a reaction chamber that is capable of housing a semiconductor substrate and is capable of forming a deposited film on a surface of the semiconductor substrate. A first container stores a source of the deposited film. A second container stores a source gas generated in the first container, and supplies the source gas to the reaction chamber. A first pipe connects the first container and the second container. A second pipe supplies an inert gas to the second container.
申请公布号 US2016208382(A1) 申请公布日期 2016.07.21
申请号 US201514812068 申请日期 2015.07.29
申请人 Kabushiki Kaisha Toshiba 发明人 Takahashi Kensei;Matsuo Kazuhiro;Aiso Fumiki
分类号 C23C16/455;C23C16/44 主分类号 C23C16/455
代理机构 代理人
主权项 1. A semiconductor manufacturing apparatus comprising: a reaction chamber being capable of housing a semiconductor substrate and being capable of forming a deposited film on a surface of the semiconductor substrate; a first container storing a source of the deposited film; a second container storing a source gas generated in the first container and supplying the source gas to the reaction chamber; a first pipe connecting the first container and the second container; and a second pipe supplying an inert gas to the second container.
地址 Minato-ku JP