发明名称 |
SEMICONDUCTOR MANUFACTURING APPARATUS |
摘要 |
A semiconductor manufacturing apparatus according to an embodiment includes a reaction chamber that is capable of housing a semiconductor substrate and is capable of forming a deposited film on a surface of the semiconductor substrate. A first container stores a source of the deposited film. A second container stores a source gas generated in the first container, and supplies the source gas to the reaction chamber. A first pipe connects the first container and the second container. A second pipe supplies an inert gas to the second container. |
申请公布号 |
US2016208382(A1) |
申请公布日期 |
2016.07.21 |
申请号 |
US201514812068 |
申请日期 |
2015.07.29 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Takahashi Kensei;Matsuo Kazuhiro;Aiso Fumiki |
分类号 |
C23C16/455;C23C16/44 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor manufacturing apparatus comprising:
a reaction chamber being capable of housing a semiconductor substrate and being capable of forming a deposited film on a surface of the semiconductor substrate; a first container storing a source of the deposited film; a second container storing a source gas generated in the first container and supplying the source gas to the reaction chamber; a first pipe connecting the first container and the second container; and a second pipe supplying an inert gas to the second container. |
地址 |
Minato-ku JP |