| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an apparatus of polishing a wafer which can exactly remove a residuary metal film after polishing. <P>SOLUTION: After the wafer undergoes polishing processing, a polishing plate 1 is moved to a wafer receiving and delivering position. An exfoliating chemical nozzle 7 is arranged in the lower part of the periphery of a wafer polishing surface, a chemical nozzle 8 for protection is arranged in the lower part of the center of the wafer polishing surface, both the chemicals are discharged while the wafer 2 is rotating, and a metal film which remains in the periphery after the flattening process is removed. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
