| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of enhancing the manufacturing yield and manufacturing efficiency of an ultra thin semiconductor device, by enhancing the separation precision of a semiconductor device formed on a substrate via a peeling layer and reducing the damages or the like of the semiconductor device in the separation process. <P>SOLUTION: A semiconductor device constituting layer 3 having a plurality of device regions 6 is formed on a substrate 1 via a low-intensity underlying film 2. Separation grooves 7 are subsequently formed on the substrate 1 having the semiconductor device constituting layer 3 in accordance with the plurality of device regions 6 such that at least the low-intensity underlying film 2 is cut. A semiconductor device 15 is created by partially cooling the device regions 6 partitioned by the separating grooves 7 while holding the device regions by an absorption member 8 having a cooling mechanism, and by separating the semiconductor device constituting layer 3 from the substrate 1 using the low-intensity underlying layer 2 as the peeling layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
