APPARATUS AND METHOD FOR A FAST RECOVERY RECTIFIER STRUCTURE

摘要

An apparatus and method for a fast recovery rectifier structure. Specifically, the structure includes a substrate (120) of a first dopant. A first epitaxial layer (140) lightly doped with the first dopant is coupled to the substrate. A first metallization layer (190) is coupled to the first epitaxial layer. A plurality of trenches (175) is recessed into the first epitaxial layer, each of which is coupled to the metallization layer. The device also includes a plurality of wells each doped with a second dopant type, wherein each well is formed beneath and adjacent to a corresponding trench. A plurality of oxide layers (170) is formed on walls and a bottom of a corresponding trench. A plurality of channel regions doped with the first dopant is formed within the first epitaxial layer between two corresponding wells. Each of the plurality of channel regions (150) is more highly doped with the first dopant than the first epitaxial layer.