METHOD OF MANUFACTURING SiC PARTICLE MONITOR WAFER

摘要

PROBLEM TO BE SOLVED: To achieve a surface of an SiC substrate sufficiently cleaned by planarizing the surface of the SiC substrate with high accuracy sufficiently in a short time and by removing metal contamination or the like on the surface of the SiC substrate. SOLUTION: A method of manufacturing an SiC particle monitor wafer includes: etching the surface of the SiC substrate by irradiating the surface ofthe SiC substrate with a gas cluster ion beam (hereinafter referred to as "GCIB") that is made by ionizing a gas cluster being an inert gas; irradiating the surface of the SiC substrate with the GCIB being a gas consisting mainly of an oxygen gas to reduce surface roughness of the SiC substrate obtained by the inert gas beam irradiating step; and removing an oxide film generated on the surface of the SiC substrate, when the GCIB of a gaseous oxygen is radiated. COPYRIGHT: (C)2008,JPO&INPIT