METHOD FOR FABRICATING N-TYPE GROUP XIII NITRIDE SEMICONDUCTOR, SURFACE LIGHT-EMITTING LASER, METHOD FOR FABRICATING CURRENT PINCHING STRUCTURE IN SURFACE LIGHT-EMITTING LASER, METHOD FOR CHANGING RESISTANCE OF NITRIDE SEMICONDUCTOR, AND METHOD FOR FABRICATING EMICONDUCTOR LASER

摘要

PROBLEM TO BE SOLVED: To provide a method for fabricating n-type group XIII nitride semiconductor having a high resistance value without substantial change of crystal structure with irradiation of light from external side and also provide a surface light-emitting laser and a method for fabricating a current pinching structure in surface light-emitting laser. SOLUTION: In the method for fabricating an n-type group XIII nitride semiconductor, resistance of the n-type group XIII nitride semiconductor is increased by irradiation of light within the range of light energy density not accompanied by change of crystal structure from external side of the n-type group XIII nitride semiconductor. With application of this method, the surface light-emitting laser provided with a current pinching layer for defining a current injection region to an active layer, and the method for fabricating the current pinching structure in the surface light-emitting laser, are constituted. COPYRIGHT: (C)2008,JPO&INPIT