NONVOLATILE MEMORY DEVICE AND FABRICATION METHOD THEREFOR

摘要

The nonvolatile memory device of this invention is characterized by comprising a substrate (1), first wiring (3), first fillings (5) that are formed embedded in first through-holes (4), second wiring (11) that is perpendicular to the first wiring (3) and comprises a multiplicity of layers laminated in the order of a resistance change layer (6) of a first resistance change element, conductive layer (7), and a resistance change layer (8) of a second resistance change element, second fillings (14) that are formed embedded in second through-holes (13), and third wiring (15), wherein the conductive layer (7) of the second wiring (11) acts as an electrode for the first resistance change element (9) and acts as an electrode for the second resistance change element (10).