OPTOELECTRONIC STRUCTURES HAVING MULTI-LEVEL OPTICAL WAVEGUIDES AND METHODS OF FORMING THE STRUCTURES

摘要

Disclosed are structures with an optical waveguide having a first segment at a first level and a second segment extending between the first level and a higher second level and further extending along the second level. Specifically, the waveguide comprises a first segment between first and second dielectric layers. The second dielectric layer has a trench, which extends through to the first dielectric layer and which has one side positioned laterally adjacent to an end of the first segment. The waveguide also comprises a second segment extending from the bottom of the trench on the side adjacent to the first segment up to and along the top surface of the second dielectric layer on the opposite side of the trench. A third dielectric layer covers the second segment in the trench and on the top surface of the second dielectric layer. Also disclosed are methods of forming such optoelectronic structures.

主权项

1. A method of forming an optoelectronic structure comprising:
forming a first segment of an optical waveguide on a first dielectric layer; forming a second dielectric layer on said first dielectric layer and covering said first segment, said second dielectric layer having a bottom surface and a top surface opposite said bottom surface; forming a trench extending from said top surface to said bottom surface and having a first side comprising a first sidewall and a second side opposite said first side and comprising a second sidewall, said first side being adjacent to an end of said first segment; forming a second segment of said optical waveguide such that said second segment comprises a first portion and a second portion continuous with said first portion,
said first portion being adjacent to said end of said first segment at a bottom of said trench on said first side, extending laterally across said bottom of said trench to said second sidewall and extending along said second sidewall to said top surface of said second dielectric layer, andsaid second portion being on said top surface of said second dielectric layer adjacent to said second side of said trench; and, forming a third dielectric layer on said second segment.