| 摘要 |
PROBLEM TO BE SOLVED: To provide a system and method of programming a memory cell.SOLUTION: A method includes selectively creating a first breakdown condition and a second breakdown condition at a semiconductor transistor structure. The first breakdown condition is between a source overlap region of the semiconductor transistor structure and a gate of the semiconductor transistor structure. The second breakdown condition is between a drain overlap region of the semiconductor transistor structure and the gate.SELECTED DRAWING: Figure 1 |
