| 摘要 |
Plasma processing equipment is provided to activate plasma ions by a temperature difference between the upper and the lower portions of a process chamber by maintaining a uniform temperature in the upper portion of the process chamber. A chamber lid(120) is disposed on a process chamber(110) in which plasma is formed. A chuck(132) on which a wafer is placed is installed in the process chamber. A pipe(180) is connected to the chamber lid. A temperature control unit(170) circulates constant temperature fluid, connected to the chamber lid by the pipe and including a thermomodule using Peltier effect. The temperature control unit can include a first temperature detecting unit connected to the chuck and a second temperature detecting unit connected to the pipe.
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