| 摘要 |
<p>A nano-floating gate type non-volatile memory device and a manufacturing method of the same are provided to read, write, and store electrical information by forming nano-particles of an indium oxide. A semiconductor substrate(10) includes source/drain regions(12,14) and a channel region(15). A tunnel insulating layer(16) is formed on the channel region. A floating gate(18) is formed with nano-particles of an indium oxide and is formed on the tunnel insulating layer. A control insulating layer(20) is formed on the floating gate. A gate electrode(22) is formed on the control insulating layer. The semiconductor substrate is formed with one of an Si substrate and an SOI(Silicon On Insulator) substrate. The tunnel insulating layer includes one element selected from a group including SiO2, HfO2, ZrO2, AlsO3, and a combination of SiO2, HfO2, ZrO2, and AlsO3.</p> |
