| 摘要 |
A method of producing a semiconductor device according to the present invention comprises steps of: (A) forming trenches ( 13 ) on the front surface (FS) of a semiconductor substrate ( 11 ) on the back surface (BS) of which a nitride film ( 12 b) is formed; (B) depositing an insulating film ( 15 ) to bury the trenches ( 13 ); (C) removing the nitride film ( 12 b) on the back surface (BS) of the semiconductor substrate ( 11 ) after the step (B); and (D) annealing before the insulating film ( 15 ) is etched after the step (C).
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