发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR WAFER, AND SEMICONDUCTOR DEVICE
摘要 There is provided a semiconductor device manufacturing method which prevents cracking of an overcoat during polishing process, and a semiconductor wafer and a semiconductor device which have an overcoat free from cracking. A plurality of divided overcoats 10 are formed on each chip 3 in a chip region 2 and on each unavailable chip pattern in an unavailable region in the periphery of the chips 3 on the surface of a semiconductor wafer 1, and the semiconductor wafer 1 is mounted upside down on a table with an intervening film so that the back surface of the semiconductor wafer 1 is polished.
申请公布号 US2008070347(A1) 申请公布日期 2008.03.20
申请号 US20060618038 申请日期 2006.12.29
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 HORI YUKITAKA
分类号 H01L21/00 主分类号 H01L21/00
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