| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a halftone phase shift mask having desired optimal optical characteristics values at high accuracy and suppressing changes in the optical characteristics due to cleaning or the like when the mask is manufactured and used. <P>SOLUTION: The halftone phase shift mask blank has a light semitransmitting film containing metal, silicon, oxygen and nitrogen on a transparent substrate, and is characterized in that: changes in the composition of the light semitransmitting film is recognized in the depth direction in a region from the surface to 100Ådepth; and when the blank is subjected to a sulfuric acid treatment by immersing the blank in a concentrated sulfuric acid at 100°C for 15 minutes, the change in the transmittance for light at a wavelength of 365 nm is at most 5.5% and the change in the phase shift amount is at most 1.1%. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
