INFRARED DETECTOR

摘要

An infrared detector includes a semiconductor substrate, a first contact layer formed on the semiconductor substrate, a light-absorbing layer formed on the first contact layer, a second contact layer formed on the light-absorbing layer, and a voltage source that applies a voltage between the first contact layer and the second contact layer. The light-absorbing layer includes at least a part in which a first intermediate layer, a quantum dot layer, a second intermediate layer, a current block layer, a third intermediate layer, and an electron-doped layer are stacked in this order. The energy at a bottom of a conduction band in the current block layer is larger than the energy at a bottom of a conduction band in the intermediate layer and the thickness of the first intermediate layer is larger than the thickness of the third intermediate layer. It is therefore possible to provide an infrared detector having a high signal to noise ratio.

主权项

1. An infrared detector comprising:
a semiconductor substrate; a first contact layer formed on the semiconductor substrate; a light-absorbing layer formed on the first contact layer; a second contact layer formed on the light-absorbing layer; and a voltage source that applies a voltage between the first contact layer and the second contact layer; wherein: the light-absorbing layer comprises at least one part in which a first intermediate layer, a quantum dot layer, a second intermediate layer, a current block layer, a third intermediate layer, and an electron-doped layer are stacked in this order, and the energy at a bottom of a conduction band in the current block layer is larger than the energy at a bottom of a conduction band in the intermediate layer and the thickness of the first intermediate layer is larger than the thickness of the third intermediate layer.