发明名称 |
Etching technique for microfabrication substrates |
摘要 |
A method for creating small features in an Al/Ag/Ti multilayer stack is disclosed. The method uses a combination of wet and dry etching techniques to anisotropically etch the layers. |
申请公布号 |
US9493877(B1) |
申请公布日期 |
2016.11.15 |
申请号 |
US201615144735 |
申请日期 |
2016.05.02 |
申请人 |
Innovative Micro Technology |
发明人 |
Harley John;Summers Jeffery F.;Gilbert Tao |
分类号 |
C23F1/02;C23F4/00;C23F1/12;H01J37/32;C23F1/16;C23F1/38;C23F1/44;B81C1/00;G03F7/004 |
主分类号 |
C23F1/02 |
代理机构 |
|
代理人 |
Spong Jaquelin K. |
主权项 |
1. An etching method for an alumina/silver/titanium multilayer stack, comprising:
applying a buffered oxide etch to etch through alumina; applying an oxygen plasma to the exposed silver to form silver oxide; and etching the silver oxide with ammonia. |
地址 |
Goleta CA US |