发明名称 Etching technique for microfabrication substrates
摘要 A method for creating small features in an Al/Ag/Ti multilayer stack is disclosed. The method uses a combination of wet and dry etching techniques to anisotropically etch the layers.
申请公布号 US9493877(B1) 申请公布日期 2016.11.15
申请号 US201615144735 申请日期 2016.05.02
申请人 Innovative Micro Technology 发明人 Harley John;Summers Jeffery F.;Gilbert Tao
分类号 C23F1/02;C23F4/00;C23F1/12;H01J37/32;C23F1/16;C23F1/38;C23F1/44;B81C1/00;G03F7/004 主分类号 C23F1/02
代理机构 代理人 Spong Jaquelin K.
主权项 1. An etching method for an alumina/silver/titanium multilayer stack, comprising: applying a buffered oxide etch to etch through alumina; applying an oxygen plasma to the exposed silver to form silver oxide; and etching the silver oxide with ammonia.
地址 Goleta CA US