MANUFACTURING METHOD AND MANUFACTURING EQUIPMENT OF THIN FILM TRANSISTOR SUBSTRATE

摘要

A manufacturing method and a manufacturing equipment of a thin film transistor substrate are provided. In the manufacturing method, after forming a gate and a gate insulating layer of a thin film transistor, a semiconductor layer and a first protection layer are sequentially deposited. After patterning the first protection layer, the patterned first protection layer is used as a mask to pattern the semiconductor layer to form a semiconductor channel of the thin film transistor. By the above solution, the invention can reduce the number of mask and therefore is beneficial to reduce the cost.

主权项

1. A manufacturing method of a thin film transistor substrate, the thin film transistor being used for an OLED display panel, the manufacturing method comprising:
sequentially depositing and patterning a first metal layer and an insulating layer on a substrate, to form gates and a gate insulating layer of thin film transistors; sequentially depositing a semiconductor layer and a first protection layer on the gate insulating layer, wherein the first protection layer is an etch-stopper layer and a material thereof is silicon nitride; patterning the first protection layer to remove a part of the first protection layer and at least remain the first protection layer covering the semiconductor layer of forming semiconductor channels of the thin film transistors, wherein in the first protection layer covering the semiconductor layer of forming the semiconductor channels, a thickness of the first protection layer covering the semiconductor layer of forming portions of the semiconductor channels contacted with sources and drains of the thin film transistors is smaller than a thickness of the first protection layer covering the semiconductor layer of forming the other of the semiconductor channels; using the patterned first protection layer as a mask to pattern the semiconductor layer to thereby remove the semiconductor layer uncovered by the patterned first protection layer; etching the first protection layer covering the semiconductor layer of forming the semiconductor channels to remove the first protection layer covering the semiconductor layer of forming the portions of the semiconductor channels contacted with the sources and the drains and thereby to expose the semiconductor layer of forming the portions of the semiconductor channels contacted with the sources and the drains; using the etched first protection layer as a mask to perform metallization on the exposed semiconductor layer of forming the portions of the semiconductor channels contacted with the sources and the drains, to form the semiconductor channels of the thin film transistors on the gate insulating layer; depositing and patterning a second metal layer on the semiconductor channels to form the sources and the drains of the thin film transistors, wherein the sources and the drains are contacted with the respective semiconductor channels, the drain of one of the thin film transistors is connected with the gate of another of the thin film transistors through a via hole formed in the gate insulating layer.