| 摘要 |
The present invention addresses the problem of providing a semiconductor contact structure and method for forming the same whereby a satisfactory ohmic or rectifying junction can be provided to a semiconductor substrate. A semiconductor contact structure and a method for creating the same, characterized in that a thin film of a metal silicon compound in which the compositional ratio of a transition metal (M) and silicon is in the range of 1:n (7 <= n <= 16) is fabricated on a surface of a semiconductor substrate. |
