Underlayer process for high O3/TEOS interlayer dielectric deposition

摘要

A underlayer process for high O3/TEOS interlayer dielectric deposition is disclosed. First, a layer of metal pattern is defined on a semiconductor substrate, then a layer of dielectric underlayer is deposited, next, a high O3/TEOS interlayer dielectric is formed to achieve planarization. The key point of this process is to apply materials with higher refraction index than conventional PE-TEOS for forming interlayer dielectric underlayer. The mentioned material can be PE-SiH4 with a constant or decreasing refraction index with the distance from the semiconductor substrate. The underlayer can also be bi-layer structure consisting of high refraction index bottom layer and low refraction index surface layer. This invention can effectively suppress the problem caused from high surface sensitivity of O3/TEOS, and improve the quality of interlayer dielectric planarization process dramatically.